The Investigation of Ion Implantation as a Technique for Manufacturing GaAs Magneto-Sensitive Detectors

Autor:	G F Karlova, B I Avdochenko
Rok vydání:	2017
Předmět:	Range (particle radiation) Materials science Silicon business.industry Detector Electrical engineering chemistry.chemical_element Linearity Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Ion implantation chemistry Hall effect Optoelectronics business Magneto
Zdroj:	IOP Conference Series: Materials Science and Engineering. 168:012026
ISSN:	1757-899X 1757-8981
DOI:	10.1088/1757-899x/168/1/012026
Popis:	This paper studies thin active layers of n-n i and n +-n-n i -types produced by means of silicon ion implantation into a semi-insulating GaAs substrate. The results of these structures' physical parameters investigation are presented. Based on the structures the Hall-effect sensors are designed that have the linearity of Hall voltage dependency on magnetic density UH(B) of at least 1% in the range of up to B
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1c697dc324205159d38b3a4417e472b https://doi.org/10.1088/1757-899x/168/1/012026 Zobrazit plný text záznamu