Structural and electrical properties of β-FeSi2 single crystals grown using Sb solvent
| Autor: | Miyoko Tanaka, Y. Saito, Hirokazu Tatsuoka, Tsuyoshi Matsuyama, H Kannou, M. Kuramoto, Zhi-Quan Liu, Haruhiko Udono, T Takeyama, Yoshihito Maeda, T. Nakamura, Hiroshi Kuwabara |
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| Rok vydání: | 2004 |
| Předmět: |
Chemistry
Photoconductivity Metals and Alloys Surfaces and Interfaces Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Faceting Crystal Crystallography Temperature gradient law Transmission electron microscopy Materials Chemistry Ionization energy Electron paramagnetic resonance |
| Zdroj: | Thin Solid Films. 461:110-115 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.02.082 |
| Popis: | β-FeSi2 bulk single crystals were grown using a temperature gradient solution growth (TGSG) process in Sb solvent. The microstructural and electrical properties of the β-FeSi2 were then characterized. Rectangular-shaped single crystals were basically obtained with facetted crystallographic planes having the predominant growth direction of β-FeSi2 [011]. No evidence for the formation of 90° order domains around the a-axis, domain boundaries and long period structures was observed by transmission electron microscopy (TEM). It was also found that the crystal shows n-type behavior, and that the donor ionization energy deduced from the temperature dependence of the electron concentration is approximately 0.12–0.15 eV. The nature of defects will be discussed along with the photoconductivity and the electron spin resonant (ESR) measurements. |
| Databáze: | OpenAIRE |
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