Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

Autor:	Chung Chan, Imad F. Husein, Yu. Gudimenko, Yuanzhong Zhou, Ka-Ngo Leung, Jacob I. Kleiman
Rok vydání:	1995
Předmět:	Materials science Ion beam Analytical chemistry Plasma-immersion ion implantation Amorphous solid symbols.namesake chemistry.chemical_compound Ion implantation Carbon film chemistry X-ray photoelectron spectroscopy symbols Raman spectroscopy Carbon nitride
Zdroj:	MRS Proceedings. 396
ISSN:	1946-4274 0272-9172
Popis:	Carbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1bf1a84398ee83bfc3079a29be237f2 https://doi.org/10.1557/proc-396-255 Zobrazit plný text záznamu Full text from SpringerLink