High-temperature superconducting devices on buffered silicon substrates

Autor: A. Matthes, Yongjun Tian, Sven Linzen, Paul Seidel, Frank Schmidl, Gunter Kaiser, S. Wunderlich, H. Schneidewind
Rok vydání: 1998
Předmět:
Zdroj: Superconducting and Related Oxides: Physics and Nanoengineering III.
ISSN: 0277-786X
Popis: The use of silicon as substrate for thin film devices based on high temperature superconducting oxides requires additional buffer layers to prevent interdiffusion, lattice mismatch, and internal stress by different thermal expansion coefficients. We tested different materials like yttrium-stabilized zirconia (YSZ), CeO 2 , and CoSi 2 . Laser deposition of a double buffer system YSZ/CeO 2 gives best results for silicon substrates up to 2 inch wafers. In this way the superconducting YBa 2 Cu 3 O 7-x (YBCO) films can reach a zero resistance temperature near 89 K and critical current densities at 77 K of up to 7(DOT)10 6 A/cm 2 . Additionally a nonsuperconducting but crystalline phase with the same stoichiometry (YBCO*) is used as passivation layer. Based on this technology we realized and investigated step- edge as well as new silicon bicrystal Josephson junctions, superconducting quantum interference devices (SQUIDs), bolometers using different compensation principles, and a new hybrid magnetometer. The hybrid magnetometer based on a simple Hall sensor was integrated with a superconducting antenna loop on the same chip.
Databáze: OpenAIRE