Direct Laser Isolation For Interdigitated Back Contact Heterojunction Solar Cells
| Autor: | Mool C. Gupta, Steven Hegedus, Nuha Ahmed, Ujjwal Das, Zeming Sun, Ugochukwu Nsofor |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Fabrication Laser ablation Passivation Silicon business.industry chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Laser 01 natural sciences Isotropic etching law.invention chemistry law 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8547964 |
| Popis: | To achieve high-efficiency and low-cost c-Si solar cells, laser-based isolation and patterning of interdigitated back contact heterojunction (IBC-HJ) solar cells have attracted increasing attention due to simplification of the complex and ratelimiting fabrication processes. Our direct laser patterning approach successfully achieved excellent isolation and minimal induced passivation and crystalline damage on both Ni-coated and Ti/Sb/Ni devices. We achieved isolation resistance as high as 2 $\times$108 ohms and the effective surface recombination velocity (SRV) as low as 5 cm/s at the optimum conditions. The SEM, optical microscope, Zygo profilomitry, and photoluminescence data confirmed the negligible loss of passivation. We also demonstrate three promising alternative approaches which combine laser processing with chemical etching or sacrificial layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|