Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators

Autor:	J.B. Kuang, Keith A. Jenkins, Kevin Stawiasz, Jeremy D. Schaub
Rok vydání:	2013
Předmět:	Engineering Silicon business.industry Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Ring oscillator Ring (chemistry) law.invention chemistry law Hardware_INTEGRATEDCIRCUITS Static random-access memory business
Zdroj:	ESSCIRC
DOI:	10.1109/esscirc.2013.6649162
Popis:	A compact SRAM ring oscillator circuit for local, in-situ, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1b1cc510b2bf0e8112315bb0fb6f105 https://doi.org/10.1109/esscirc.2013.6649162 Zobrazit plný text záznamu