Formation of SiOF Films by Plasma-Enhanced Chemical Vapor Deposition Using (C2H5O)3SiF

Autor:	Masayoshi Sasaki, Masakazu Muroyama, Hitoshi Kimura, Misako Iwasawa, Hideyuki Kitoh
Rok vydání:	1996
Předmět:	Permittivity Absorption of water Chemistry General Engineering General Physics and Astronomy Relative permittivity Mineralogy chemistry.chemical_element Chemical vapor deposition Dielectric Chemical engineering Plasma-enhanced chemical vapor deposition Fluorine Thin film
Zdroj:	Japanese Journal of Applied Physics. 35:1464
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.35.1464
Popis:	A new Plasma-Enhanced Chemical Vapor Deposition (PECVD) method using (C2H5O)3SiF: tri-ethoxy-fluoro-silane as an interlayer dielectric film is proposed based on considerations of gas chemistry. RF power dependence of the film characteristics is investigated, and it is clarified that fluorine stability is improved with increasing RF power. The relative dielectric constant of the films deposited at the power of more than 700 W is about 3.5. Moisture absorption of the film formed from TEFS at 900 W is smaller than that of the SiOF film formed from C2F6 added TEOS.
Databáze:	OpenAIRE
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