Influence of Boron Doping on Transport Properties of YBa2Cu3O7−y HTS

Autor: I. R. Metskhvarishvili, N. G. Margiani, V. V. Zhghamadze, N. A. Papunashvili, I. A. Mzhavanadze
Rok vydání: 2010
Předmět:
Zdroj: Journal of Superconductivity and Novel Magnetism. 24:279-281
ISSN: 1557-1947
1557-1939
DOI: 10.1007/s10948-010-1013-4
Popis: The nominally pure and boron-doped YBa2Cu3BxO7−y samples with B-doping level x varying between 0 and 0.15 were prepared by the solid state reaction. X-ray diffraction analysis shows that all the obtained compounds are single YBa2Cu3O7−y phase. The small additives of boron in YBa2Cu3BxO7−y (x=0.025 and 0.05) do not essentially affect the critical temperature Tc and it remains near 90 K. The higher-level boron doping causes degradation of Tc and tail remains on the ρ(T) curve for x=0.15 at 65 K. Lowest-level boron doping applied leads to a significant improvement in Jc compared to the undoped sample (from 100 A cm−2 for a control sample to 147 A cm−2 for a B-doped sample with x=0.025). Grain boundary critical current density and superconducting volume fraction decrease with increasing amount of added B2O3. The obtained results indicate possibility of boron dopant being entered into the lattice-sites.
Databáze: OpenAIRE
Externí odkaz: