Chemical-state-resolved In-depth analysis of TiN / La-O / HfSiO / Si Gate Stack Studied by Back-side Angle-resolved Photoemission Spectroscopy with Synchrotron Radiation

Autor:	Satoshi Toyoda, Tatsuhiko Tanimura, Hiroyuki Kamada, Hiroshi Kumigashira, Masaharu Oshima, Toshihiro Ohtsuka, Yoshifumi Hata, Masaaki Niwa
Rok vydání:	2009
Zdroj:	ECS Meeting Abstracts. :723-723
ISSN:	2151-2043
DOI:	10.1149/ma2009-01/15/723
Popis:	not Available.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1a2f52ce626321722eef61ca01b4215 https://doi.org/10.1149/ma2009-01/15/723 Zobrazit plný text záznamu