A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor
| Autor: | Seungwon Go, Jae Yeon Park, Hyug Su Kwon, Woo Young Choi, Sangwan Kim, Shinhee Kim |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Ferroelectricity Ferroelectric capacitor Electronic Optical and Magnetic Materials law.invention Capacitor law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Negative impedance converter Voltage Perovskite (structure) |
| Zdroj: | Solid-State Electronics. 175:107956 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2021.107956 |
| Popis: | Nanoelectromechanical (NEM) device has been regarded as one of the future switching devices due to its nearly infinite switching slope and zero off-state leakage current. However, it suffers from high pull-in voltage which causes high operation voltage. In this study, a sub-15 nm-thick Al-doped HfO2-based ferroelectric (FE) layer with a negative capacitance (NC) that can exceed the scalability limitation of the perovskite materials is used for voltage amplification to solve the issue. In detail, the model parameters are extracted from the separately fabricated devices; the capacitor of FE material and the NEM device. Using the parameters, the influences of NC on the NEM device are theoretically examined. In addition, systems with other dopants in HfO2-based FE material are compared. Finally, the design parameters are optimized for a low-power FE-NEM system. |
| Databáze: | OpenAIRE |
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