Modelling the breakdown of the quantum hall effect in silicon-MISFET'S and GaAs/GaAlAs-heterostructures
| Autor: | J.H. Seyfarth, L. Bliek, C. Breitlow, G. Nachtwei, P. Svoboda, F.-J. Ahlers, J. Breitlow-Hertzfeldt |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon Condensed matter physics Thermal Hall effect chemistry.chemical_element Heterojunction Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Magnetic field Quantum spin Hall effect chemistry General Materials Science Field-effect transistor Electrical and Electronic Engineering MISFET |
| Zdroj: | Superlattices and Microstructures. 12:195-201 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/0749-6036(92)90336-4 |
| Popis: | We measured the critical current of the quantum Hall effect of Si-MISFET-structures and its dependence on the gate voltage and on GaAsGaAlAs-heterostructures and its dependence on the magnetic field. Calculations based upon a Zener tunneling modell were made to explain the experimental results. For the Si - structures we introduced a filling-factor-dependent width of the quantum Hall current path. The current path is maximal near integer filling factors and decreases with deviation from the plateau centre. In contrast, we obtained good results with the real width for GaAs/GaAlAs-structures over the whole range of the plateaux. |
| Databáze: | OpenAIRE |
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