| Autor: |
P. Sasahara, Janna R. B. Casady, Arnd Dietrich Weber, Erwin Schmitt, Richard L. Woodin, Gary M. Dolny, J. Shovlin, Jeff B. Casady, Tony Witt, Thomas Straubinger |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :223-226 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.645-648.223 |
| Popis: |
We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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