SIMS Studies of Semi‐Insulating InP Amorphized by Mg and Si
| Autor: | J. D. Oberstar, Peter Williams, B. G. Streetman, Judith E. Baker |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Annealing (metallurgy) Analytical chemistry Electron Condensed Matter Physics Channelling Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Secondary ion mass spectrometry Materials Chemistry Electrochemistry Redistribution (chemistry) Semi insulating |
| Zdroj: | Journal of The Electrochemical Society. 129:1320-1325 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2124128 |
| Popis: | Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi‐insulating have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of implanted with 1015 cm−2, 250 keV Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550° and 650°C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750°C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 μm are seen in the bulk. Little redistribution of Si occurs during 30 min, 750°C anneals of , 240 keV Si implants. Redistribution of Fe is observed in these Si implanted samples, however, resulting in an accumulation region near the implanted Si peak. |
| Databáze: | OpenAIRE |
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