A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization
| Autor: | Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho, Jihwan Park, Junil Moon, Sung-Hak Lee, Tae-Kyun Kim, Sanghoon Oh, Seokwoo Choi, Yongsuk Choi, Ho Sung Cho, Taesik Yun, Young Jun Koo, Jae-Seung Lee, Byung-Kuk Yoon, Young-Jun Park, Sangmuk Oh, Chang Kwon Lee, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Kyo Yun Lee, Sang-Hoon Lee, Woo Sung We, Seungchan Kim, Seung Min Yang, Keonho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Seonyeol Kim, Dong-Yeol Lee, Su-Hyun Oh, Jung-Hyun Shin, Yeonho Lee, Jieun Jang, Joohwan Cho |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | IEEE Journal of Solid-State Circuits. 58:256-269 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2022.3193354 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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