Determination of composition of non-homogeneous GaInNAs layers
| Autor: | A. Vincze, Damian Radziewicz, Damian Pucicki, Beata Ściana, Marek Tłaczała, M. Latkowska-Baranowska, K. Bielak, Jaroslav Kováč |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry Heterojunction 02 engineering and technology Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Characterization (materials science) Inorganic Chemistry Condensed Matter::Materials Science Semiconductor 0103 physical sciences Band diagram Materials Chemistry Optoelectronics 0210 nano-technology business Quantum well |
| Zdroj: | Journal of Crystal Growth. 433:105-113 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2015.10.011 |
| Popis: | Dilute nitride GaInNAs alloys grown on GaAs have become perspective materials for so called low-cost GaAs-based devices working within the optical wavelength range up to 1.6 μm. The multilayer structures of GaInNAs/GaAs multi-quantum well (MQW) samples usually are analyzed by using high resolution X-ray diffraction (HRXRD) measurements. However, demands for precise structural characterization of the GaInNAs containing heterostructures requires taking into consideration all inhomogeneities of such structures. This paper describes some of the material challenges and progress in structural characterization of GaInNAs layers. A new algorithm for structural characterization of dilute nitrides which bounds contactless electro-reflectance (CER) or photo-reflectance (PR) measurements and HRXRD analysis results together with GaInNAs quantum well band diagram calculation is presented. The triple quantum well (3QW) GaInNAs/GaAs structures grown by atmospheric-pressure metalorganic vapor-phase epitaxy (AP-MOVPE) were investigated according to the proposed algorithm. Thanks to presented algorithm, more precise structural data including the nonuniformity in the growth direction of GaInNAs/GaAs QWs were achieved. Therefore, the proposed algorithm is mentioned as a nondestructive method for characterization of multicomponent inhomogeneous semiconductor structures with quantum wells. |
| Databáze: | OpenAIRE |
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