Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs
| Autor: | Ansel Barchowsky, William E. Stanchina, Zhi-Hong Mao, Raghav Khanna, Joseph P. Kozak, Gregory F. Reed, Michael R. Hontz |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Gate turn-off thyristor Materials science 020208 electrical & electronic engineering Gate dielectric Transistor 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention Gate oxide law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Gate driver Electronic engineering Metal gate Electronic circuit |
| Zdroj: | 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| Popis: | This paper presents an analytical framework, supplemented with experimental validation, for optimizing the value of the external gate resistance employed in power conversion circuits using EPC enhancement-mode GaN transistors. A second order analytical model of the GaN device is utilized to determine a function that relates the external gate resistance to the peak gate voltage during turn-on. The results obtained from the analytical model were experimentally validated in a double pulse-test. The derived model allows for optimal selection of gate resistances such that GaN HFETs can be switched as rapidly as possible while keeping them in their safe operating region. |
| Databáze: | OpenAIRE |
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