Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide
| Autor: | Hyun-Seop Kim, Su-Keun Eom, Ho-Young Cha, Kwang-Seok Seo, Hyungtak Kim |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength business.industry Transistor Oxide Charge density Time-dependent gate oxide breakdown Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry law Gate oxide Plasma-enhanced chemical vapor deposition 0103 physical sciences Optoelectronics 0210 nano-technology business Instrumentation |
| Zdroj: | Vacuum. 155:428-433 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2018.06.043 |
| Popis: | This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed charge density and oxide bulk charge density extracted from the flat-band voltage characteristics were 2.7 × 1011 ± 6.54 × 1010 cm−2 and -9.71 × 1017 ± 5.18 × 1016 cm−3, respectively. The time dependent dielectric breakdown (TDDB) characteristics exhibited longer lifetime estimation as the SiO2 thickness increased. The excellent reliability of the PECVD SiO2 film was validated for use as the gate oxide of recessed AlGaN/GaN MOS-HFET. |
| Databáze: | OpenAIRE |
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