Effect of e‐beam irradiation on ap‐njunction GaN light emitting diode

Autor:	Xiuling Li, S. Q. Gu, Joseph T. Verdeyen, Stephen G. Bishop, E. E. Reuter, James J. Coleman
Rok vydání:	1996
Předmět:	Materials science Atmospheric pressure business.industry General Physics and Astronomy Chemical vapor deposition Electroluminescence law.invention law Cathode ray Optoelectronics business p–n junction Layer (electronics) Current density Light-emitting diode
Zdroj:	Journal of Applied Physics. 80:2687-2690
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363131
Popis:	A GaN p‐n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low‐energy electron beam source. The effect of e‐beam exposure on the room‐temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron‐beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c14251d3f1e5c108d910b497314479bd https://doi.org/10.1063/1.363131 Zobrazit plný text záznamu