Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

Autor:	Min-Chen Chen, Ting-Chang Chang, Yi-Chieh Chiu, Shih-Cheng Chen, Sheng-Yao Huang, Yong-En Syu, Kuan-Chang Chang, Hui-Chun Huang, Tsung-Ming Tsai, Der-Shin Gan, Simon M. Sze
Rok vydání:	2013
Zdroj:	ECS Transactions. 53:1-7
ISSN:	1938-6737 1938-5862
Popis:	The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 102 with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c13db721ad7642999979caf8e7ea2ae1 https://doi.org/10.1149/05329.0001ecst Zobrazit plný text záznamu