Photoluminescence study of porous p-type silicon: Identification of radiative transitions
| Autor: | Orlando Auciello, L. Tirado-Mejía, Andrés Medina-Herrera, Mario E. Rodríguez-García, C.F. Ramirez-Gutierrez, Luis F. Zubieta-Otero |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Silicon Biophysics chemistry.chemical_element 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon Laser 01 natural sciences Biochemistry Molecular physics Atomic and Molecular Physics and Optics law.invention chemistry law Quantum dot Metastability 0103 physical sciences Wafer 0210 nano-technology Surface states |
| Zdroj: | Journal of Luminescence. 201:11-17 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2018.04.036 |
| Popis: | The research discussed in this paper focused on a systematic methodology to elucidate the controversy about transitions responsible for the photoluminescence (PL) spectrum from porous silicon (PSi) layers etched on a p-type Si wafer, to understand the nature of light emitting mechanisms from PSi. The PL spectrum of PSi, as a function of temperature, shows the existence of broad peaks, initially associated with stable surface states. However, the PL studies as a function of time, under continuous laser fluency, shows the presence of electronic states due to silicon columns (quantum confinement) and the metastable surface states. Finally, the PL studies, during which the laser was cut off for several hours, confirm that the surface states are metastable. Based on the information provided by these studies, the interpretation of the results indicates that the PL spectrum of PSi is a superposition of porous surface states and states originated in the porous layer considered as a pseudo lattice of the Si bulk. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect