Cuprous oxide (Cu2O) thin films prepared by reactive d.c. sputtering technique
| Autor: | Radhaballav Bhar, Arun Kumar Pal, S. Dolai, S. Das, Sajjad Hussain |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope Analytical chemistry Oxide 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films symbols.namesake chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Sputtering 0103 physical sciences symbols Thin film 0210 nano-technology Raman spectroscopy Spectroscopy Instrumentation |
| Zdroj: | Vacuum. 141:296-306 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2017.04.033 |
| Popis: | Synthesis of cuprous oxide (Cu2O) by direct current (DC) reactive magnetron sputtering technique has been demonstrated. Ar:O2 gas ratios in the plasma and the substrate temperature were the decisive parameters for the formation of unblemished Cu2O polycrystalline films. The optimal deposition parameters are: Ar:O2 ∼90:10; Ts∼623 K and d.c. power ∼0.6 kV at 1.2 mA/cm2. Optical spectroscopy, photo luminescence, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman measurements were carried out to characterize the films. Predominant p-type conductivity in the Cu2O films was confirmed from Hall measurement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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