ICP-AES analysis of silicon, germanium, and their oxides
| Autor: | A. I. Saprykin, Anastasiya V. Shaverina, N. N. Khomichenko, Alphiya R. Tsygankova |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Trace (linear algebra) Materials science Silicon General Chemical Engineering 010401 analytical chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Germanium 01 natural sciences 0104 chemical sciences Silicon-germanium Inorganic Chemistry Matrix (chemical analysis) chemistry.chemical_compound chemistry Impurity Inductively coupled plasma atomic emission spectroscopy 0103 physical sciences Materials Chemistry Inductively coupled plasma |
| Zdroj: | Inorganic Materials. 52:1405-1412 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168516140077 |
| Popis: | The techniques of atomic emission spectrometry with inductively coupled plasma (ICP-AES) for quantitative determination impurities in silicon, germanium, and their dioxides are developed. Analytical lines for silicon-matrix (29 trace elements) and germanium-matrix (42 trace elements) are selected. Matrix interferences caused by the presence of silicon and germanium in the solutions are studied. The optimal concentrations of matrix are determined. LODs for trace elements are in the range from n × 10–7 to n × 10–5 wt %; RSD < 20%. The accuracy of the results is confirmed by the method of “introduced–found.” The developed techniques are express, simple, and can determine a broad range of trace elements. |
| Databáze: | OpenAIRE |
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