The interface characteristics of passivity anodic oxide films on Hg0.8Cd0.2Te by C–V measurements
| Autor: | Nguyen Thi Bao Ngoc, Nguyen Van Nha |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Passivation
business.industry Band gap Passivity Inorganic chemistry Metals and Alloys Oxide Analytical chemistry Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Materials Chemistry Surface charge business Surface states Voltage |
| Zdroj: | Thin Solid Films. 334:40-43 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)01113-4 |
| Popis: | The electrical properties of the interface between Hg 0.8 Cd 0.2 Te (MCT) and its oxide film prepared by anodic oxidation were estimated at 77 K. The surface charge states density Q ss , fast surface states density N ss , type of states of passivity anodic oxide films are obtained from capacitance–voltage measurement. The interface between MCT and its anodic oxide film is characterized by a fast surface states density of the order of N ss =7×10 10 eV −1 cm −2 near the middle of the bandgap and of N ss ≈7×10 11 eV −1 cm −2 at flat band voltage in accordance with fixed surface charge states density Q ss =2×10 −8 C cm −2 (for n-type samples). The fixed oxide surface charge states density is positive for both p-type and n-type MCT semiconductors. |
| Databáze: | OpenAIRE |
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