InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer
| Autor: | Mi Yang Kim, Bo Hyun Kong, Rak Jun Choi, Bae Kyun Kim, Hyung Koun Cho |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Doping Condensed Matter Physics medicine.disease_cause law.invention Inorganic Chemistry Atomic layer deposition law Electrical resistivity and conductivity Materials Chemistry medicine Atomic layer epitaxy Optoelectronics business Layer (electronics) Ultraviolet Light-emitting diode Diode |
| Zdroj: | Journal of Crystal Growth. 326:147-151 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2011.01.085 |
| Popis: | For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of −3 –10 −4 Ω cm, a high carrier concentration of >10 20 cm −3 , and an excellent optical transmittance of ∼85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p -GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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