Non-equilibrium molecular orbital calculations of Si/SiO 2 interfaces
| Autor: | Jurgen Schulte, Jiro Ushio, Takuya Maruizumi |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Silicon
Semiconductor materials Monte Carlo method Metals and Alloys chemistry.chemical_element Heterojunction Surfaces and Interfaces Semiconductor device Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry Materials Chemistry Physical chemistry Molecular orbital Thin film Realization (systems) |
| Zdroj: | Thin Solid Films. 369:285-288 |
| ISSN: | 0040-6090 |
| Popis: | A non-equilibrium statistical molecular orbital approach has been developed to analyze non-equilibrium configurations in Si/SiO 2 heterostructures, improvement of which is essential for realization of superior semiconductor devices. The non-equilibrium statistics is discussed and results obtained in conjunction with molecular orbital calculations are being presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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