Autor: |
Jay Holavanahalli, Michael Geva, L. E. Smith, Abdallah Ougazzaden |
Rok vydání: |
2000 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. 221:66-69 |
ISSN: |
0022-0248 |
DOI: |
10.1016/s0022-0248(00)00650-3 |
Popis: |
Carbon doping in InAlAs material grown with LP-MOVPE has been studied. Carbon tetrabromide (CBr 4 ) has been used as a source of carbon. We investigated the influence of the growth parameter on the carbon incorporation. Carbon concentrations as high as 3×10 19 cm −3 were achieved at the low temperature of 530°C and the low V/III ratio of 20. Post-thermal annealing was required to activate carbon atoms. Hole concentrations as high as 1.8×10 19 cm −3 have been obtained. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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