Carbon doping of InAlAs in LP-MOVPE using CBr4

Autor: Jay Holavanahalli, Michael Geva, L. E. Smith, Abdallah Ougazzaden
Rok vydání: 2000
Předmět:
Zdroj: Journal of Crystal Growth. 221:66-69
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(00)00650-3
Popis: Carbon doping in InAlAs material grown with LP-MOVPE has been studied. Carbon tetrabromide (CBr 4 ) has been used as a source of carbon. We investigated the influence of the growth parameter on the carbon incorporation. Carbon concentrations as high as 3×10 19 cm −3 were achieved at the low temperature of 530°C and the low V/III ratio of 20. Post-thermal annealing was required to activate carbon atoms. Hole concentrations as high as 1.8×10 19 cm −3 have been obtained.
Databáze: OpenAIRE