Femtosecond laser ablation of silicon–modification thresholds and morphology

Autor:	M. Lenzner, S. Baudach, Wolfgang Kautek, Jörn Bonse, J. Krüger
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry medicine.medical_treatment Pulse duration chemistry.chemical_element General Chemistry Laser Ablation Fluence law.invention Optics chemistry law Femtosecond medicine Sapphire General Materials Science Crystalline silicon business
Zdroj:	Applied Physics A. 74:19-25
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s003390100893
Popis:	We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c0fcacba75499b6bcbd97cc03b11549a https://doi.org/10.1007/s003390100893 Zobrazit plný text záznamu Plný text ve formátu PDF