Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain
| Autor: | H. Dambkes, P. Narozny, C. Werres, J. Wenger, J. Splettstosser |
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| Rok vydání: | 1992 |
| Předmět: |
Frequency response
Materials science business.industry General Engineering General Physics and Astronomy Integrated circuit Noise figure Cutoff frequency Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics Output impedance Cascode business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Guided Wave Letters. 2:46-48 |
| ISSN: | 1051-8207 |
| DOI: | 10.1109/75.122405 |
| Popis: | Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /sub gm///sub gd/ of 125 and a C/sub gs//C/sub gd/ ratio of 45. The current gain cutoff frequency f/sub T/ is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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