Growth and crystallization of molybdenum layers on amorphous silicon
| Autor: | Yu. P. Pershyn, V. V. Kondratenko, V.A. Sevryukova, Evgeniy N. Zubarev |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science Silicon Metals and Alloys chemistry.chemical_element Recrystallization (metallurgy) Surfaces and Interfaces Semimetal Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Crystallography chemistry.chemical_compound chemistry Sputtering Transmission electron microscopy law Molybdenum Materials Chemistry Crystallization Composite material |
| Zdroj: | Thin Solid Films. 520:314-319 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.06.056 |
| Popis: | The structure of molybdenum layers deposited by direct current magnetron sputtering onto the amorphous silicon (a-Si) layers as function of nominal layer thickness was studied by methods of transmission electron microscopy. Molybdenum layers with nominal thickness 1.5 1 1 ¯ 0 direction. As the metal layer thickness increases Mo-crystallites take the more regular form at the expense of recrystallization. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect