Ultrafast characterization of an in‐plane gate transistor integrated with photoconductive switches

Autor:	Tomoyoshi Mishima, J. Allam, N. de B. Baynes, K. Ogawa, J. R. A. Cleaver, Isao Ohbu
Rok vydání:	1995
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Displacement current Coplanar waveguide Transistor Integrated circuit Capacitance law.invention Parasitic capacitance law Optoelectronics Field-effect transistor business Voltage
Zdroj:	Applied Physics Letters. 66:1228-1230
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.113245
Popis:	An in‐plane gate field‐effect transistor is characterized by ultrafast electro‐optic sampling. The transistor is monolithically integrated with photoconductive switches in coplanar waveguide and
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c0da360b6e65023b83267350aaa02cb2 https://doi.org/10.1063/1.113245 Zobrazit plný text záznamu