An Approach to Characterize Behavior of Multiport ICs under ESD Stress
| Autor: | Omid Hoseini Izadi, David Pommerenke, Nathaniel Peachey, Kathleen Muhonen |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Electrostatic discharge Computer science 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit 01 natural sciences law.invention Stress (mechanics) RF switch law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Radio frequency Current (fluid) Multi port Voltage |
| Zdroj: | 2019 41st Annual EOS/ESD Symposium (EOS/ESD). |
| Popis: | ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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