High performance graphene-silicon Schottky junction solar cells with HfO2 interfacial layer grown by atomic layer deposition
| Autor: | Irfan Saadat, Ibraheem Almansouri, Ammar Nayfeh, Aaesha Alnuaimi |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon Renewable Energy Sustainability and the Environment business.industry Graphene Schottky barrier Energy conversion efficiency Oxide chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Hafnium oxide Atomic layer deposition chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business Layer (electronics) |
| Zdroj: | Solar Energy. 164:174-179 |
| ISSN: | 0038-092X |
| DOI: | 10.1016/j.solener.2018.02.020 |
| Popis: | Among the limiting factors that affect the performance of Graphene (Gr)/ Silicon (Si) Schottky barrier solar cells (SBSC) - are the high recombination at Gr/Si interface and the growth of undesirable native oxide that resulted in instability issue. In this work, hafnium oxide (HfO2) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells. Engineering the interface with HfO2 contributed to enhancing the power conversion efficiency remarkably from 3.9% to 9.1%. The obtained efficiency with HfO2 interfacial layers grown by ALD is considered among the highest reported for Gr/Si SBSC using pristine graphene. |
| Databáze: | OpenAIRE |
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