Microstructure fabrication of GaN and Si substrates using intense femtosecond laser

Autor:	Kazue Ozono, M. Obara
Rok vydání:	2002
Předmět:	Materials science Laser ablation Silicon business.industry Wide-bandgap semiconductor chemistry.chemical_element Gallium nitride Laser Microstructure law.invention chemistry.chemical_compound chemistry Etching (microfabrication) law Femtosecond Optoelectronics business
Zdroj:	LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).
DOI:	10.1109/leos.2001.969039
Popis:	We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c0b70848067ab26e9d394977e18c251f https://doi.org/10.1109/leos.2001.969039 Zobrazit plný text záznamu