As-Received CdZnTe Substrate Contamination

Autor: A. Yulius, C. M. Lennon, L. A. Almeida, Priyalal Wijewarnasuriya, R. N. Jacobs, Jeffrey M. Peterson, M. Jaime-Vasquez, R. Hirsch, Andrew J. Stoltz, S. Motakef, M. Reddy, J. D. Benson, M. F. Vilela, P. J. Smith, M. Carmody, J. K. Markunas, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. Fiala, Scott M. Johnson
Rok vydání: 2015
Předmět:
Zdroj: Journal of Electronic Materials. 44:3082-3091
ISSN: 1543-186X
0361-5235
Popis: State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12 × 1015, S = 1.7 × 1014, P = 7.1 × 1013, Fe = 1.0 × 1013, Br = 1.9 × 1012, and Cu = 4 × 1012 atoms cm−2 was observed on an as-received 6 × 6 cm wafer. As-received CdZnTe substrates have scratches and residual polishing grit on the (112)B surface. Polishing scratches are 0.3 nm in depth and 0.1 μm wide. The polishing grit density was observed to vary from wafer-to-wafer from ∼5 × 106 to 2 × 108 cm−2. Te precipitate/inclusion size and density was determined by near-infrared automated microscopy. A Te precipitate/inclusion diameter histogram was obtained for the near-surface (top ~140 μm) of a 6 × 6 cm substrate. The average areal Te precipitate/inclusion density was observed to be fairly uniform. However, there was a large density of Te precipitates/inclusions with a diameter significantly greater than the mean. Te precipitate/inclusion density >10 μm diameter = 2.8 × 103 cm−3. The large Te precipitates/inclusions are laterally non-uniformly distributed across the wafer.
Databáze: OpenAIRE
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