As-Received CdZnTe Substrate Contamination
Autor: | A. Yulius, C. M. Lennon, L. A. Almeida, Priyalal Wijewarnasuriya, R. N. Jacobs, Jeffrey M. Peterson, M. Jaime-Vasquez, R. Hirsch, Andrew J. Stoltz, S. Motakef, M. Reddy, J. D. Benson, M. F. Vilela, P. J. Smith, M. Carmody, J. K. Markunas, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. Fiala, Scott M. Johnson |
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Rok vydání: | 2015 |
Předmět: |
Materials science
Analytical chemistry Polishing chemistry.chemical_element Substrate (electronics) Contamination Condensed Matter Physics Electronic Optical and Magnetic Materials Crystallography chemistry Impurity Materials Chemistry Wafer Electrical and Electronic Engineering Inclusion (mineral) Tellurium Molecular beam epitaxy |
Zdroj: | Journal of Electronic Materials. 44:3082-3091 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-015-3823-4 |
Popis: | State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12 × 1015, S = 1.7 × 1014, P = 7.1 × 1013, Fe = 1.0 × 1013, Br = 1.9 × 1012, and Cu = 4 × 1012 atoms cm−2 was observed on an as-received 6 × 6 cm wafer. As-received CdZnTe substrates have scratches and residual polishing grit on the (112)B surface. Polishing scratches are 0.3 nm in depth and 0.1 μm wide. The polishing grit density was observed to vary from wafer-to-wafer from ∼5 × 106 to 2 × 108 cm−2. Te precipitate/inclusion size and density was determined by near-infrared automated microscopy. A Te precipitate/inclusion diameter histogram was obtained for the near-surface (top ~140 μm) of a 6 × 6 cm substrate. The average areal Te precipitate/inclusion density was observed to be fairly uniform. However, there was a large density of Te precipitates/inclusions with a diameter significantly greater than the mean. Te precipitate/inclusion density >10 μm diameter = 2.8 × 103 cm−3. The large Te precipitates/inclusions are laterally non-uniformly distributed across the wafer. |
Databáze: | OpenAIRE |
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