Optimising the Rectification Ratio of Schottky Diodes in n-SiC and n-Si by TCAD
| Autor: | Patrick W. Leech, Tuan A. Bui, Anthony S. Holland, Mohammad Saleh N Alnassar, G. K. Reeves, Jim G. Partridge, Hiep N. Tran |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Doping Schottky diode 02 engineering and technology Dielectric Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Barrier layer Reverse leakage current Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science Work function 0210 nano-technology business Diode |
| Zdroj: | MRS Advances. 1:3655-3660 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2016.343 |
| Popis: | Finite element modelling has been used to optimise the current/ voltage (I/V) characteristics of metal/ n-SiC and metal/ n-Si diodes incorporating a thin interfacial layer. The electrical properties of the diodes have been examined in relation to the polytype of SiC (3H, 4H or 6C), the doping level, NA, (1015 - 1018cm3) of the substrate, the defect state density, Dit and the work function of the Schottky metal, Φm. The modelling by Technology Computer-Aided Design (TCAD) has shown that the presence of an interfacial insulating layer with a thickness of 1.0 nm has reduced the reverse leakage current of the diode by a factor of ∼102 in Si and 1013 (from 10-19 A to 10-6 A) for SiC with only a minor reduction (∼ 0.8 times) in the forward current in SiC. The properties of the diodes have been modelled at room temperature without thermal annealing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink