InGaAsSb thermophotovoltaic diode: Physics evaluation

Autor:	L. R. Danielson, Christine A. Wang, D. M. DePoy, Dmitri Z. Garbuzov, H. K. Choi, M. Freeman, G. W. Charache, P. F. Baldasaro, V. B. Khalfin, Ronald J. Gutmann, J.M. Borrego, Ramon U. Martinelli, S. Saroop
Rok vydání:	1999
Předmět:	Physics Electron mobility business.industry Band gap General Physics and Astronomy Carrier lifetime Photodiode law.invention Gallium arsenide chemistry.chemical_compound chemistry law Thermophotovoltaic Optoelectronics business Diode Dark current
Zdroj:	Journal of Applied Physics. 85:2247-2252
ISSN:	1089-7550 0021-8979
Popis:	The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1000 °C, which sets an upper limit on the TPV diode band gap of 0.6 eV from efficiency and power density considerations. This band gap requirement has necessitated the development of new diode material systems never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice matched on GaSb substrates have achieved the highest performance. In this article we relate observed diode performance to electro-optical properties such as minority carrier lifetime, diffusion length, and mobility and provide initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.53 eV InGaAsSb diodes used in this analysis (active layer doping is 2×1017 cm−3) the dark current density measured is 2×10−5 A/cm2 versus a potential Auger and/or a radiative limit of 2×10−6 A/cm2 (no photon recycling), and an abso...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c08e9f9470145eea88515eb213c77504 https://doi.org/10.1063/1.369533 Zobrazit plný text záznamu