InGaAsP/InP distributed feedback laser wafers grown by an interrupted liquid phase epitaxy technique

Autor:	D.G. Knight, W. Benyon
Rok vydání:	1988
Předmět:	Distributed feedback laser Photoluminescence Materials science business.industry Liquid phase Condensed Matter Physics Epitaxy Cladding (fiber optics) Inorganic Chemistry Thermal Materials Chemistry Optoelectronics Wafer business
Zdroj:	Journal of Crystal Growth. 92:659-662
ISSN:	0022-0248
DOI:	10.1016/0022-0248(88)90050-4
Popis:	An interrupted liquid phase epitaxy technique for the growth of InGaAsP/InP distributed feedback laser wafers is described, which uses low temperature growth of an initial γ=1.0 μm InGaAsP cladding layer followed by high temperature growth of all subsequent layers. The partially grown wafer is protected by an overpressure of phosphorus supplied by an InP:Sn solution while soaking the high temperature melts. Thermal degradation of the partially grown wafers was not noted, as determined by microscopic examination and photoluminescence studies of γ=1.0 μm cladding layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c084f71466a8cfd6645e1e1ef2a9b14d https://doi.org/10.1016/0022-0248(88)90050-4 Zobrazit plný text záznamu