Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm2 V−1 s−1

Autor:	Hiroshi Yanagi, Chiyuki Sato, Takahisa Omata, Hideo Hosono, Toshio Kamiya, Issei Suzuki, Yota Kimura
Rok vydání:	2015
Předmět:	Electron mobility Materials science Semiconductor Physics and Astronomy (miscellaneous) X-ray photoelectron spectroscopy business.industry Photoemission spectroscopy Band gap Wide-bandgap semiconductor Optoelectronics Heterojunction business Amorphous solid
Zdroj:	Applied Physics Letters. 106:082106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4913691
Popis:	Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm2 V−1 s−1. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu2O, which is suitable for solar cells and solar-blind ultraviolet sensors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c081b8aaf98ae05e7a50c7ee5ef91ddf https://doi.org/10.1063/1.4913691 Zobrazit plný text záznamu