Metallization of the Organic Conductor (TTM-TTP)I3with a Highly One-Dimensional Half-Filled Band under Pressure beyond 7 GPa

Autor:	Masato Hedo, Tadashi Kawamoto, Tsutomu Fujimoto, Takehiko Mori, Masahiro Shimotori, Keizo Murata, Yoshiya Uwatoko, Syuma Yasuzuka
Rok vydání:	2007
Předmět:	Materials science Condensed matter physics Hubbard model Electrical resistivity and conductivity Mott insulator Transition temperature Coulomb General Physics and Astronomy Condensed Matter::Strongly Correlated Electrons Ground state Electronic band structure Conductor
Zdroj:	Journal of the Physical Society of Japan. 76:178-181
ISSN:	1347-4073 0031-9015
DOI:	10.1143/jpsjs.76sa.178
Popis:	It is theoretically predicted that the ground state of the one-dimensional (1D) half-filled system is the Mott insulator at any positive on-site Coulomb interaction U . In this paper, we demonstrate that (TTM-TTP)I 3 with a highly 1D half-filled energy band is almost metallized by the application of pressure beyond 7 GPa. We find that the metal–insulator transition temperature decreases linearly with increasing pressure and is directing towards 0 K near 10 GPa. Above 5.7 GPa, the metallic behaviors are observed in the high-temperature region for 70 < T < 300 K, in which the temperature dependence of the resistivity is described by ρ( T ) ∝ T α with α∼0.3. The nature of the metallic state is discussed in terms of the Tomonaga-Luttinger liquid described by the Hubbard model.
Databáze:	OpenAIRE
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