Titanium disilicide formation by interdiffusion of titanium/amorphous silicon multilayers: Influence of the bilayer silicon to titanium thickness ratio on the film properties

Autor:	P. Aloupogiannis, A. Travlos, A. G. Nassiopoulos, A. Traverse, D. Tambouris
Rok vydání:	1992
Předmět:	Amorphous silicon Materials science Silicon Bilayer General Physics and Astronomy Mineralogy chemistry.chemical_element Amorphous solid Monocrystalline silicon chemistry.chemical_compound chemistry Titanium disilicide Silicide Composite material Titanium
Zdroj:	Journal of Applied Physics. 72:4660-4668
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.352122
Popis:	Titanium disilicide is formed by thermal annealing of amorphous Si/Ti multilayers, deposited on monocrystalline silicon by alternate electron‐gun evaporation of Si and Ti. The bilayer periodicity was equal to 4. The bilayer Si/Ti thickness ratio was varied between 2 and 3 and its influence on the film properties (stoichiometry, surface and interface roughness and resistivity) was studied and compared to the properties of a silicide of the same thickness, formed by annealing of a single deposited Ti layer on monocrystalline silicon. The characterization techniques used are: x‐ray‐diffraction, Rutherford backscattering, scanning electron microscopy, surface profilometry, and electrical measurements. The reaction rate of deposited Ti with monocrystalline silicon for the formation of TiSi2 is also compared in a special experiment to that of deposited Ti with amorphous Si (α‐Si).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c06b1e3d958192d3b3f7e0b8fc475792 https://doi.org/10.1063/1.352122 Zobrazit plný text záznamu