Autor: |
Stephen A. Wender, Marcus H. Mendenhall, J.R. Schwank, Paul E. Dodd, M.A. Clemens, Brian D. Sierawski, Kevin M. Warren, Marty R. Shaneyfelt, Robert A. Weller, N. A. Dodds, Robert Baumann, Robert A. Reed |
Rok vydání: |
2011 |
Předmět: |
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Zdroj: |
IEEE Transactions on Nuclear Science. 58:2591-2598 |
ISSN: |
0018-9499 |
DOI: |
10.1109/tns.2011.2171716 |
Popis: |
Neutron-induced charge collection data and computer simulations presented here show that the presence of high-Z materials, like tungsten, can increase the single event upset (SEU) and multiple cell upset (MCU)cross sections of high critical charge (Qcrit) devices exposed to the terrestrial neutron environment because of interactions with high energy ( >; 100 MeV) neutrons. Time-of-flight data and computer simulations presented here demonstrate that 14 MeV neutrons do not produce highly ionizing secondary particles. Thus, 14 MeV neutrons can only simulate the SEU response of 65 nm SRAM devices in the terrestrial neutron environment for devices with a Qcrit |
Databáze: |
OpenAIRE |
Externí odkaz: |
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