Germanium junction field effect transistor for cryogenic applications
| Autor: | C. Monroy, N.C Das, M. Jhabvala |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Liquid helium Transconductance Bipolar junction transistor Analytical chemistry chemistry.chemical_element Germanium Liquid nitrogen Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Noise (electronics) Electronic Optical and Magnetic Materials Threshold voltage law.invention chemistry law Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 44:937-940 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(00)00013-7 |
| Popis: | The n-channel germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. Ideal device current and voltage characteristics were obtained at cryogenic temperatures down to the liquid helium temperature (4.2 K). The Ge-JFET exhibits a superior noise performance at the liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that the transconductance increases monotonically with the lowering of temperature to 4.2 K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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