Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering

Autor:	Sophie Bernasconi, David Cooper, Jean-Francois Damlencourt, Yves Morand, Fabrice Nemouchi, Sylvie Favier, Jean-Michel Hartmann, Veronique Carron
Rok vydání:	2013
Předmět:	Engineering Engineering drawing Strain engineering business.industry business Engineering physics
Zdroj:	ECS Transactions. 58:239-248
ISSN:	1938-6737 1938-5862
DOI:	10.1149/05809.0239ecst
Popis:	Strained SiGe and SiC sources and drains are planned to be used in sub-28nm FDSOI devices in order to improve the carriers mobility. Consequently, silicide-induced relaxation of strained epitaxial layers is a key issue to address in order to fully benefit from the desired effects of strain engineering techniques. This paper deal with the impact of the silicidation process conditions on the strain of Si1-xGex:B layers (x=0.3 and 0.45) and SiC:P with [C]≤1,5%. We show that the strain of epitaxial layers is not affected by the silicidation in the case of Si0.7Ge0.3 and SiC, while a strong degradation of strain occurs with Si0.55Ge0.45. The strain evolution in the channel of a device at various stages of the silicidation process has been followed using dark field electron holography. We show that process parameters can be tuned in order to minimize the reduction of strain induced by the silicidation
Databáze:	OpenAIRE
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