An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] Interfaces

Autor:	Muhammad F. Sahdan, Panji Achmari, Fatimah A. Noor, Ferry Iskandar, Mikrajuddin Abdullah
Rok vydání:	2011
Předmět:	Coupling Materials science Condensed matter physics Analytical chemistry Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Trap (computing) Condensed Matter::Materials Science Capacitor Magnetic anisotropy law Transmittance Quantum well Quantum tunnelling
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.3667224
Popis:	An analytical model of electron transmittance and tunneling current in an anisotropic n+poly‐Si/HfO2/SiO2/Si (100) metal‐oxide‐semiconductor capacitor by including a trap between n+ and SiO2 interfaces has been derived. It considers the coupling of electron transverse and longitudinal motions and uses an Airy‐wavefunction approach. It has been shown that the tunneling current density increases as the trap becomes deeper or wider because many resonant states available in the quantum well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c041a68d9cfb3ada716d35f668db037d https://doi.org/10.1063/1.3667224 Zobrazit plný text záznamu