Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
| Autor: | Shawn G. Thomas, Papu D. Maniar, Q.J. Hartmann, Xiuling Li, D.A. Ahmari, Eric S. Johnson, B. Roof, Clarence J. Tracy |
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| Rok vydání: | 2005 |
| Předmět: |
Fabrication
Materials science business.industry Bipolar junction transistor chemistry.chemical_element Germanium Heterojunction Dielectric Epitaxy Electronic Optical and Magnetic Materials Characterization (materials science) Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 26:438-440 |
| ISSN: | 0741-3106 |
| Popis: | In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates. |
| Databáze: | OpenAIRE |
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