2D MoWSe2Material Photoluminescence Characterization based on MOS Device
| Autor: | Tuo Zhouhui, Xinzhua Wang, Hongwei Liu, Canbin Hu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
0303 health sciences
Materials science Photoluminescence business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Exfoliation joint Characterization (materials science) 03 medical and health sciences Semiconductor Si substrate Transition metal Optoelectronics 0210 nano-technology business Layer (electronics) 030304 developmental biology |
| Zdroj: | 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| DOI: | 10.1109/edtm47692.2020.9117999 |
| Popis: | MoWSe 2 has emerged as a special member in the family of two-dimensional transition metal dichalcogenide semiconductors. Mono-layer MoWSe 2 MOS device was fabricated by mechanical exfoliation on SiO 2 /Si substrate. We have observed strong and highly layer dependent photoluminescence in mono- and few-layer MoWSe 2 (one to four layers). Our results provide much needed experimental information about the properties in MoWSe 2 Material. |
| Databáze: | OpenAIRE |
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