Static characteristic and transient behavior of a N+PNN+transistor irradiated with flash-X ray
| Autor: | C. Dachs, C. Sudre, F. Pelanchon, Jean-Narie Palau, J. Gasiot |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Nuclear and High Energy Physics
Radiation Materials science Condensed matter physics Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law Electric field General Materials Science Power semiconductor device Field-effect transistor Transient (oscillation) Transient response Resistor Power MOSFET |
| Zdroj: | Radiation Effects and Defects in Solids. 139:229-239 |
| ISSN: | 1029-4953 1042-0150 |
| DOI: | 10.1080/10420159608212928 |
| Popis: | This work concerns a parasitic N+PNN+ transistor appearing in a power MOSFET. 2D Medici simulations point out a close correlation between the static characteristic and the transient values of both the current and the reverse bias of the transistor irradiated by a flash-X ray. The static characteristic points out a steady-state where the transistor behaves as a resistor. If the dose rate is sufficient, it can bring the transistor to the same steady-state. In both cases, this steady-state is reached after the same physical process: conduction of the emitter-base junction, shift of the electric field towards the NN+ junction and highly avalanching conditions in the device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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