| Autor: |
Tianjiao Dai, Xinxin Zhang, Zhangwei Huang, Kuan-Chang Chang, Xinnan Lin, Rongkang Niu |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). |
| DOI: |
10.1109/icsict49897.2020.9278171 |
| Popis: |
This work investigates the mechanism of threshold voltage V th shift of D-Mode GaN-on-Si high electron mobility transistors (HEMTs) based on double pulse I DS -V GS measurements. The influence of applied drain voltage V DS on shift of V th is also studied. The V th shift is attributed to the traps located at the dielectric and dielectric/III-nitride interface. More specifically, (1) the presence of relatively fast traps located in the SiN x capture electrons tunneling from the gate metal in the quiescent gate pulse points, which cannot be released during the measurement, inducing the positive shift of V th ; (2) the higher V DS with higher electric field promote the release of electrons from the interface states to the channel, which is more obvious on the on-state gate pulse, leading to a smaller positive shift of V th when comparing to off-state. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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