A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT
| Autor: | Petra Rowell, Zach Griffith, Miguel Urteaga |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Power-added efficiency
Materials science business.industry Amplifier Heterojunction bipolar transistor RF power amplifier 020206 networking & telecommunications Gain compression 02 engineering and technology Condensed Matter Physics Electricity generation 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 29:282-284 |
| ISSN: | 1558-1764 1531-1309 |
| Popis: | We report here a compact 140-GHz, 150-mW high-gain solid-state power amplifier (SSPA) monolithic microwave integrated circuit (MMIC) demonstrated in a 250-nm InP HBT technology. It utilizes five-gain stages and two-way on-chip power combining. The amplifier measures 29.5-dB mid-band $S_{21}$ gain and over 125-mW output power across 115–150-GHz operation. The peak 153-mW output power was measured at 140 GHz using only 2.7-mW RF input power—the associated large-signal gain is 17.5 dB with 9.8% power added efficiency (PAE). The 140-GHz OP1 dB 1-dB gain compression power is 106 mW with 7.0% PAE. The dc power dissipation is 1.54 W and its size is only 0.75 mm2. The 3-dB $S_{21}$ gain roll-off is between 112 and 147 GHz. The 115–150-GHz output power variation at 0-dBm input drive is only ±0.5 dB. The peak PAE varies between 8.2% and 10.5%. This D-band result improves upon by $2.3\times $ at 140 GHz the state-of-the-art peak RF power previously demonstrated by SSPA MMICs. |
| Databáze: | OpenAIRE |
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