High brightness GaN-based light emitting diodes using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction

Autor: Tae-Hoon Kim, Hyo-Kun Son, Sang-Hern Lee, Sung-Jae Kim, Jong-Jae Jung, Hwan-Hee Jeong, Suk-Hun Lee, Young Moon Yu, Ja-Soon Jang
Rok vydání: 2004
Předmět:
Zdroj: phys. stat. sol. (a). 201:2726-2729
ISSN: 1521-396X
0031-8965
DOI: 10.1002/pssa.200405123
Popis: Indium tin oxide (ITO) ohmic electrode was employed to enhance the optical power in tunnel junction light emitting diodes (TJ-LEDs). The electrical and optical measurement showed that the lateral current spreading and brightness were considerably improved as compared to those of conventional p/n-junction LEDs, leading to the reduction of the forward voltage by means of 0.1 V. The TJ structure of LEDs consists of n + -InGaN/InGaN superlattice/n + -GaN/p-GaN grown a InGaN/InGaN single quantum well (SQW) on AlInN/GaN multi-buffer. The transmittance of ITO is 90-94% on 460-520 nm spectral ranges, and the total output power of SQW LEDs is effectively increased. The forward voltage of the SQW LEDs, including the voltage drop across the reverse-biased TJ is 3.2 V at 20 mA, while that of standard SQW LEDs with a conventional contact structure is 3.1 V at 20 mA. Furthermore, the output power of LEDs with the TJ is over 6 mW at 20 mA, while that of conventional LEDs is about 4.5 mW at 20 mA. Especially, the electrostatic discharge (ESD) value of fabricated TJ-LED chips is -5 KV at human body conditions.
Databáze: OpenAIRE
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